Mechanism for bistability in organic memory elements
نویسندگان
چکیده
We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber @Proc. R. Soc. A 391, 77 ~1967!#. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current–voltage curve is N shaped and the low and high resistance states are obtained by applying voltage close to the local maximum and minimum, respectively. © 2004 American Institute of Physics. @DOI: 10.1063/1.1643547#
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