INTERFACE EFFECTS ON THE PERSISTENT PHOTOCONDUCTIVITY IN THIN GaN AND AlGaN FILMS

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures

Persistent photoconductivity effects have been characterized in n-type Al0.15Ga0.85N/GaN heterostructures using both monochromatic light and room light illumination. Time constants of ;1310 s have been observed, and measurements of photocurrent specta performed using various illumination geometries and techniques have shown that defect levels exist in both the Al0.15Ga0.85N and GaN layers. Broa...

Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

Persistent photoconductivity ͑PPC͒ effect associated with a two-dimensional electron gas ͑2DEG͒ in an AlGaN/GaN heterojunction device has been observed. As a consequence, the device was observed to be sensitive to light and the sensitivity was associated with a permanent photoinduced increase in the 2DEG carrier mobility and density. By formulating the PPC buildup and decay kinetics, we attributed ...

Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation

Phase pure cubic (c-) GaN/AlGaN heterostructures on 3CSiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (Q...