Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

نویسندگان

  • C. H. Cheng
  • Y. H. Wu
  • M. J. Wu
  • Albert Chin
چکیده

Article history: Received 19 August 2011 Received in revised form 4 March 2012 Accepted 8 March 2012 Available online 23 April 2012 The review of this paper was arranged by Prof. S. Cristoloveanu

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تاریخ انتشار 2012