Quantum-Hall activation gaps in graphene.
نویسندگان
چکیده
We have measured the quantum-Hall activation gaps in graphene at filling factors nu=2 and nu=6 for magnetic fields up to 32 T and temperatures from 4 to 300 K. The nu=6 gap can be described by thermal excitation to broadened Landau levels with a width of 400 K. In contrast, the gap measured at nu=2 is strongly temperature and field dependent and approaches the expected value for sharp Landau levels for fields B>20 T and temperatures T>100 K. We explain this surprising behavior by a narrowing of the lowest Landau level.
منابع مشابه
Symmetry breaking in the zero-energy Landau level in bilayer graphene.
The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high-field regime, the eightfold degeneracy in the zero-energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding to filling factors nu=0, 1, 2, and 3. Measurements of the activation en...
متن کاملSignatures of single quantum dots in graphene nanoribbons within the quantum Hall regime† †Electronic supplementary information (ESI) available. See DOI: 10.1039/C6NR00187D Click here for additional data file.
We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that are formed in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in ...
متن کاملQuantum Hall ferromagnetism in graphene.
Graphene is a two-dimensional carbon material with a honeycomb lattice and Dirac-like low-energy excitations. When Zeeman and spin-orbit interactions are neglected, its Landau levels are fourfold degenerate, explaining the 4e2/h separation between quantized Hall conductivity values seen in recent experiments. In this Letter we derive a criterion for the occurrence of interaction-driven quantum ...
متن کاملTrivial and inverted Dirac bands and the emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides
Proximity orbital and spin-orbital effects of graphene on monolayer transition-metal dichalcogenides (TMDCs) are investigated from first-principles. The Dirac band structure of graphene is found to lie within the semiconducting gap of TMDCs for sulfides and selenides, while it merges with the valence band for tellurides. In the former case, the proximity-induced staggered potential gaps and spi...
متن کامل1 Energy gaps , topological insulator state and zero - field quantum Hall effect in graphene by strain engineering
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no carriers and the half-integer quantum Hall effect (QHE) observable even at room temperature [1-3]. Because graphene is only one atom thick, it is also amenable t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 99 20 شماره
صفحات -
تاریخ انتشار 2007