The neutralization of Na+ ions in HCl grown SiO2
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چکیده
2014 The kinetic behaviour of Na+ ions in (HCl) MOS capacitors has been studied by the method of thermally stimulated ionic currents (TSIC). Both charged and neutral trap states at the Si-SiO2 interface were identified. The dependence of the ion neutralization process on oxide chlorine content, and on the time and temperature of positive bias stress was investigated. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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