Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study - Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroCon
نویسندگان
چکیده
منابع مشابه
Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study
High electron mobility transistors (HEMTs) based on III–V semiconductor materials have been investigated as these devices are scaled down to gate lengths of 120, 90, 70, 50 and 30 nm. A standard Monte Carlo (MC) method coupled with the solution of Poisson’s equation is employed to simulate a particle transport. The average particle velocity and the field–momentum relaxation time are studied in ...
متن کاملDesign Optimisation of Ultra-short Gate Hemts Using Monte Carlo Simulation
By using a Monte Carlo simulator the static and dynamic characteristics of a 50 nm gate AlInAs/GaInAs δ−doped HEMTs are investigated. The Monte Carlo model includes some important effects that are indispensable when trying to reproduce the real behaviour of the devices, such as degeneracy, presence of surface charges, T-shape of the gate, presence of dielectrics and contact resistances. Among t...
متن کاملKalna, K. and Asenov, A. and Elgaid, K. and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic
The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an additional scattering mechamism in the Mon...
متن کاملSimulation of Gallium-Arsenide Based High Electron Mobility Transistors
We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...
متن کاملHybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors
We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled with a 2D and 3D multi-grid Poisson solver.
متن کامل