Coupled Drift-Di↵usion Model and Collective Decision-Making

نویسندگان

  • Vaibhav Srivastava
  • Naomi Leonard
چکیده

Figure 83: (a) The network of [263] contains three populations of excitatory cells; each selective population responds preferentially to one stimulus, the third is nonselective to both stimuli. A fourth population of interneurons provides overall inhibition. Excitatory (NMDAand AMPA-mediated) and inhibitory (GABAA-mediated) synapses are denoted by filled and open ovals respectively. All cells receive noisy AMPA-mediated background excitation; each cell connects to every other and selective populations have relatively stronger local recurrent excitation. (b) Stimuli excite both selective populations, but inhibition typically suppresses one population, producing winner-take-all dynamics. A decision is made when the first population crosses a fixed decision threshold. Figure adapted from [60].

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Qualitative behavior of weak solutions of the drift di usion model for semiconductor devices coupled with Maxwell s equations

The transient drift di usion model describing the charge transport in semiconductors is con sidered Poisson s equation which is usually used is replaced by Maxwell s equations The di usion and mobility coe cients and the dielectric and magnetic susceptibilities may depend on the space variables Global existence and convergence to the thermal equilibrium is shown

متن کامل

On di!usion approximation with discontinuous coe$cients

Convergence of stochastic processes with jumps to di!usion processes is investigated in the case when the limit process has discontinuous coe$cients. An example is given in which the diffusion approximation of a queueing model yields a di!usion process with discontinuous di!usion and drift coe$cients. c © 2002 Elsevier Science B.V. All rights reserved. MSC: 60B10; 60K25

متن کامل

Diffusion in Semiconductor Technology

The paper deals with the analysis of pair di usion models in semiconductor technology. The underlying model contains reaction-drift-di usion equations for the mobile point defects and dopant-defect pairs as well as reaction equations for immobile dopants which are coupled with a nonlinear Poisson equation for the chemical potential of the electrons. For homogeneous structures we present an exis...

متن کامل

A Semi-parametric Test for Drift Specication in the Di¤usion Model

In this paper, we propose a misspeci…cation test for the drift coe¢ cient in a semi-parametric di¤usion model. Our test is based on the score marked empirical process whose asymptotic behavior will be distorted by the estimation of the drift parameters. We use martingale transformtion to take away the estimation e¤ects which makes our test asymptotic distribution-free. The limit theory relies o...

متن کامل

A Martingale Approach for Testing Di¤usion Models Based on Innitesimal Operator

I develop an omnibus speci…cation test for di¤usion models based on the in…nitesimal operator instead of the already extensively used transition density. The in…nitesimal operatorbased identi…cation of the di¤usion process is equivalent to a "martingale hypothesis" for the new processes transformed from the original di¤usion process. The transformation is via the celebrated "martingale problems...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017