Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodes
نویسندگان
چکیده
A detailed model is proposed to explain the electroluminescence spectrum from metal–oxide– silicon tunneling diodes. This model includes phonon-assisted processes and exciton involvement. According to this model, the main peak and the low-energy tail of the electroluminescence spectrum are attributed to the transverse optical phonon and the two-phonon assisted recombination, respectively. With very few fitting parameters, the model accurately predicts the measured electroluminescence spectra. © 2001 American Institute of Physics. @DOI: 10.1063/1.1381000#
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