High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition

In this paper, we present the characteristics of high-performance strain-compensated MOCVD-grown 1200-nm InGaAs and 1300-nm InGaAsN quantum-well (QW) lasers using AsH3 and U-Dimethylhydrazine as the group V precursors. The design of the InGaAsN QW active region utilizes an In-content of approximately 40%, which requires only approximately 0.5% N-content to realize emission wavelengths up to 1315-nm. Threshold current densities of only 65–90 A/cm were realized for InGaAs QW lasers, with emission wavelength of 1170–1233 nm. Room-temperature threshold and transparency current densities of 210 and 75–80 A/cm, respectively, have been realized for InGaAsN QW lasers with emission wavelength of 1300-nm. Despite the utilization of the highly-strained InGaAsN QW, double-QW lasers have been realized with excellent lasing performance.