Dynamics of Domain Wall in Thin Film Driven by Spin Current
نویسندگان
چکیده
The dynamics of magnetization under the applied spin current is modeled by the generalized Landau-Lifshitz-Gilbert equation with a spin transfer torque term. Using matched asymptotic expansion with the domain wall thickness ǫ as the small parameter, we derive analytically the dynamic law for the domain wall motion induced by the spin current. We show that the domain wall driven by adiabatic current spin-transfer torque moves with a decreasing velocity and eventually stops. With a pinning potential, the domain wall motion is a damped oscillation around the pinning site with an intrinsic frequency which is independent of the strength of the current. When the AC current is applied, the dynamic law shows that the frequency of the applied current can be turned to maximize the amplitude of the oscillation. The results obtained are consistent with the recent experimental and numerical results.
منابع مشابه
مشخصات پیوندگاههای ابررسانا - فرومغناطیس - ابررسانا با پایانههای ابررسانای یکتایی
We study numerically the electronic heat capacity, spin and charge current in a diffusive Superconductor-Ferromagnetic-Superconductor systems، with singlet superconducting leads and non-uniform ferromagnetic layer. Specially, we focus on ferromagnetic layer with domain wall and conical structures incorporation the spin-active interfaces. We investigate, how the 0-π transition is influenced by n...
متن کاملTheory of current-driven domain wall motion: spin transfer versus momentum transfer.
A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current has two effects: one is momentum transfer, which is proportional to the charge current and wall resistivity (rho(w)); the other is spin transfer, proportional to spin current. For thick walls, as in metallic wires, the latter dominates and the threshold current for wall mo...
متن کاملSol-gel spin coating derived ZnO thin film to sense the acetic acid vapor
ZnO thin film of 80 nm thickness was deposited by the sol-gel spin coating method on SiO2/Si substrate and subsequently post-annealed at 500°C with a flow of oxygen for 60 min. Crystallographic structure of the sample was characterized by X-ray diffraction (XRD) method while a field emission scanning electron microscope (FESEM) was used to investigate the surface physical morphology ...
متن کاملSol-gel spin coating derived ZnO thin film to sense the acetic acid vapor
ZnO thin film of 80 nm thickness was deposited by the sol-gel spin coating method on SiO2/Si substrate and subsequently post-annealed at 500°C with a flow of oxygen for 60 min. Crystallographic structure of the sample was characterized by X-ray diffraction (XRD) method while a field emission scanning electron microscope (FESEM) was used to investigate the surface physical morphology ...
متن کاملDeconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...
متن کامل