Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors
نویسندگان
چکیده
and their integration into field effect transistors Sakulsuk Unarunotai, Yuya Murata, Cesar E. Chialvo, Hoon-sik Kim, Scott MacLaren, Nadya Mason, Ivan Petrov, and John A. Rogers Department of Chemistry, University of Illinois at Urbana-Champaign, 505 South Mathews Avenue, Urbana, Illinois 61801, USA Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801, USA Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 West Green Street, Urbana, Illinois 61801, USA Department of Mechanical Science and Engineering, Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
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Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC „0001... for high frequency transistors
Up to two layers of epitaxial graphene have been grown on the Si-face of 2 in. SiC wafers exhibiting room-temperature Hall mobilities up to 2750 cm2 V−1 s−1, measured from ungated, large, 160 200 m2 Hall bars, and up to 4000 cm2 V−1 s−1, from top-gated, small, 1 1.5 m2 Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annea...
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