Transparent Oxide TFTs Fabricated by Atomic Layer Deposition(FA2386-11-1-114052)

Final Report FA2386-10-1-04063 High performance and highly reliable ZnO Thin Film Transistor fabricated by Atomic Layer Deposition for Next Generation Displays

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature,...

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al...

Top Gate Amorphous In−Ga−Zn−O Thin Film Transistors Fabricated on Soda−Lime−Silica Glass Substrates

This work presents a comparative analysis of top gate a-IGZO TFTs fabricated on both soda-lime-silica glass and alkali-free borosilicate glass. Low-temperature ALD is selected for the deposition of gate dielectric to minimize a thermal stress. Comparing with TFTs on alkali-free borosilicate glass, TFTs with soda-lime-glass show similar threshold voltage and subthreshold swing, but slightly degr...

Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors.

A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxi...