Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems
نویسنده
چکیده
The defect structure in relaxed (100) InGaAs/GaAs heteroepitaxial systems grown by molecular beam epitaxy is studied by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the dislocation density. The density of dislocations is inversely proportional to the layer thickness and increases with misfit. The results are compared to theoretical models.
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