Photoluminescence of the GaAs Superlattices with Quasi-Delta-Doped Layers
نویسندگان
چکیده
The GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-doping. Photoluminescence spectra measured at 4.2 K display well-distinguished peaks, which coincide with transitions between quantizied levels of electrons and holes in the potential relief quantum wells. To describe observed phenomena in quasi-doped superlattices a theory is developed with taking into account existing tails of the density of states.
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