Research Toward High Performance Epitaxial and Low-temperature Cu(In,Ga)Se2 Solar Cells

The CIGS research effort at the University of Illinois represents a three-pronged approach to understanding and solving some of the most critical issues in CIGS device. These three prongs are: (1) development of a basic understanding of the issues limiting performance in CIGS devices, (2) advancing the performance of the devices through single crystal epitaxial layers for integration into high-performance cells, and (3) developing novel growth processes that will allow lower deposition temperatures necessary to multijunction devices. This paper presents an approach for CIGS/GaAs and CIGS/Ge heterojunction solar cells for multijunction high-efficiency devices. In addition, application of ionized physical vapor deposition to lowtemperature deposition of CIGS is described. The two projects will be coupled and results from one used to enhance progress in the other as part of the Beyond the Horizon and High Performance PV programs now starting.