Physical Modeling of Spiral Inductors on Silicon
نویسندگان
چکیده
This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance.
منابع مشابه
An Efficient Technique for Substrate Coupling Parasitic Extraction with Application to RF/Microwave Spiral Inductors (RESEARCH NOTE)
This paper presents an efficient modeling method, based on the microstrip lines theory, for the coupling between a substrate backplane and a device contact. We derive simple closed-form formulas for rapid extraction of substrate parasitics. We use these formulas to model spiral inductors as important substrate-noise sources in mixed-signal systems. The proposed model is verified for the freque...
متن کاملDesign and Fabrication of High-Q Spiral Inductors Using MEMS Technology
This paper presents the design and modeling, fabrication and characterization of suspended spiral inductors on silicon substrate. The substrate materials underneath the inductor coil are removed by micromachining process to reduce the substrate loss which enables high frequency operation. A complete Library of spiral inductors with different line width, line spacing and number of turns have bee...
متن کاملModeling and Performance of Spiral Inductors in Soi Cmos Technology
Modeling and performance of on-chip spiral inductors is presented. Y-parameters are obtained from the measured S-parameters of the inductor fabricated in 0.35-μm SOI CMOS technology. Matlab is used to get the π-equivalent circuit model parameters at each frequency point. The SOI CMOS inductor shows better performance characteristics in terms of Q-factor and self-resonance frequency.
متن کاملThrough-Silicon-Via Inductor based DC-DC Converters: The Marriage of the Princess and the Dragon
There has been a tremendous research effort in recent years to move DC-DC converters on chip for enhanced performance. However, a major limiting factor to implement on-chip inductive DC-DC converters is the large area overhead induced by spiral inductors. Towards this, we propose to use through-silicon-vias (TSVs), a critical enabling technique in three-dimensional (3D) integrated systems, to i...
متن کاملDesign and Modeling of a Micromachined High-Q Tunable Capacitor With Large Tuning Range and a Vertical Planar Spiral Inductor
In wireless communication systems, passive elements including tunable capacitors and inductors often need high quality factor ( -factor). In this paper, we present the design and modeling of a novel high -factor tunable capacitor with large tuning range and a high -factor vertical planar spiral inductor implemented in microelectromechanical system (MEMS) technology. Different from conventional ...
متن کامل