Static and Dynamical Properties of Dispersive Optical Bistability in Semiconductor Lasers
نویسنده
چکیده
Absfnzst-Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold; Although conventionally the OB switch-off time in dispersive semiconductor laser ampliers is limited by the effective carrier lifetime, a much faster OB switchoff can be obtained when a laser diode operates well above threshold in the injection-locked condition.
منابع مشابه
Optical bistability in diode-laser amplifiers and injection-locked laser diodes.
Static and dynamic properties of dispersive optical bistability (OH) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OH result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OH can be expected when...
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