Amplifying High-Impedance Sensors – Photodiode Example

نویسندگان

  • Kumen Blake
  • Steven Bible
چکیده

Figure 1 shows the equivalent circuit of a transimpedance amplifier and a high-impedance source. IS represents the output current of the source. CS is the sum of the source’s output capacitance and the op amp’s input capacitance. RF, with the help of the op amp, converts IS to a voltage. At low frequencies, the op amp’s inverting input is forced to be at ground potential and IS must flow through RF. This combination of effects creates an output voltage of ISRF. At higher frequencies, the capacitors will affect the circuit response. The output capacitance of a current sensor has a strong effect on the stability of the op amp feedback loop. Bode plots are aids in both analyzing this effect and in properly compensating the transimpedance amplifier using the capacitor (CF). The capacitors also limit the bandwidth of the transimpedance amplifier. RN and CN reduce the output noise. The output noise is also kept low by not over-compensating the feedback loop.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Synthesis Circuit Correction for Speed Sensors of Physical Quantities and Current-Voltage Converters with Parasitic Capacitance

The paper presents the method of increasing the speed of sensors with high output resistance, for example, photodiode of optical systems for transmitting digital information. The features of method of correcting circuit of current-voltage converters, which compensate the influence of parasitic capacitance of sensor on its bandwidth and the settling time of the transient process are considered.

متن کامل

Charge Transfer Noise and Lag in CMOS Active Pixel Sensors

This paper reports on the investigation of charge-transfer noise and lag in CMOS image sensors. Noise and lag are analyzed for buried-photodiode CMOS active-pixel-sensor (APS) devices using a simple Monte-Carlo technique. Since the main mechanism of charge-transfer noise involves carrier emission over a barrier, the results are applicable to the soft reset of photodiode-type CMOS APS devices, a...

متن کامل

Radiation damage studies of amorphous-silicon photodiode sensors for applications in radiotherapy X-ray imaging

The high radiation tolerance of hydrogenated amorphous silicon (a-Si : H) is one reason it has become a candidate for high-energy physics applications and for radiotherapy and diagnostic imaging. The performance of 1 [,m and 5 [Lm a-Si : H n-i-p photodiode sensors used in conjunction with Lanex (Gd 202S : Tb) intensifying screens has been measured as a function of high-energy photon dose . Over...

متن کامل

Simulations of Passive Matrix Polymer Image Sensors

Two-dimensional passive photodiode matrices are hardly useful for image sensing due to the crosstalk between pixels. This crosstalk makes it difficult to recover information from individual pixels. A switching unit attached to each sensing unit has been the common solution in image sensors (such as in CMOS sensors and in TFT-PiN a-Si photosensors). A novel organic photodiode with voltage-switch...

متن کامل

Feed-forward voltage in CMOS pinned photodiodes

CMOS image sensors have become very popular in low cost imaging devices. In order to realize images of high quality, the image sensors need to have a high resolution, be able to achieve a high Signal-to-Noise ratio (SNR) and have a wide dynamic range. To increase the spatial resolution of the image sensors, the pixel size has been scaling down allowing integration of more pixels in a given die ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004