Copyright(c)JCPDS-International Centre for Diffraction Data 2000,Advances in X-ray Analysis,Vol.43 510
نویسنده
چکیده
Barium Strontium Titanate (BST) is under consideration as a high dielectric constant material for a number of semiconductor applications. Because of its very large dielectric constant, BST is seen as an enabling material that will allow the continual &inking of integrated circuits and progression along the path of Moore’s Law [l]. The electrical behavior of BST is extremely dependent upon its material properties, including its stoichiometry, crystal structure and thickness. Therefore, successful implementation of BST into integrated circuits will require a thorough understanding of, and the ability to control, its material properties. Several x-ray methods are ideally suited for characterization and metrology of the material properties of BST: XRF for stoichiometry, XRD for structure, and XRR for fihn thickness. This paper focuses primarily on the application of the latter two methods toward characterization of BST films. Analysis of BST films deposited using spin-on, sputtering and CVD methods are included. In addition, part of the paper covers the results of a multi-laboratory “round robin” comparing the application of XRF and XRR techniques on the same set of BST films.
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