Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

نویسندگان

  • Yang-Yang Lv
  • Bin-Bin Zhang
  • Xiao Li
  • Bin Pang
  • Fan Zhang
  • Da-Jun Lin
  • Jian Zhou
  • Shu-Hua Yao
  • Y. B. Chen
  • Shan-Tao Zhang
  • Minghui Lu
  • Zhongkai Liu
  • Yulin Chen
  • Yan-Feng Chen
چکیده

Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

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عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016