A LATERALLY ETCHED COLLECTOR InP/InGaAs(P) DHBT PROCESS FOR HIGH SPEED POWER APPLICATIONS
نویسندگان
چکیده
Abstract We present a selective laterally wet etched collector InP/InGaAs/InGaAsP double heterojunction bipolar transistor (DHBT) with a quaternary step graded base collector structure. This device shows a DC current gain of = 70 over a large collector current range, a breakdown voltage of BVCE0 = 10.5 V, and a maximal collector emitter voltage of more than 5.5 V at 105 A/cm2 collector current density. A transit frequency of fT = 115 GHz and a maximum oscillation frequency of fmax = 170 GHz were achieved.
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