Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling
نویسندگان
چکیده
M. V. Costache, I. Neumann, J. F. Sierra, V. Marinova, M.M. Gospodinov, S. Roche, and S. O. Valenzuela ICN2—Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, Bellaterra, 08193 Barcelona, Spain Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain Institute of Optical Materials and Technologies, Bulgarian Academy of Science, Sofia 1113, Bulgaria Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee boulevard, 1784 Sofia, Bulgaria ICREA—Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain (Received 7 August 2013; revised manuscript received 14 November 2013; published 25 February 2014)
منابع مشابه
Measurement of an exceptionally weak electron-phonon coupling on the surface of the topological insulator Bi2Se3 using angle-resolved photoemission spectroscopy.
Gapless surface states on topological insulators are protected from elastic scattering on nonmagnetic impurities which makes them promising candidates for low-power electronic applications. However, for widespread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the ...
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