III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy
نویسندگان
چکیده
منابع مشابه
Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire
Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nanopatterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15 nm low-temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of ...
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