Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study
نویسندگان
چکیده
P. H. Tan,1,* X. D. Luo,2,5 Z. Y. Xu,1 Y. Zhang,3,† A. Mascarenhas,3 H. P. Xin,4 C. W. Tu,4 and W. K. Ge5 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China 2Jiangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong, 226007, People’s Republic of China 3National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA 4Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093, USA 5Department of Physics, Hong Kong University of Science and Technology, Hong Kong, People’s Republic of China Received 7 April 2006; published 17 May 2006
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