Transmission Electron Microscopy Studies of Electrical Active GaAs/GaN Interface Obtained by Wafer Bonding
نویسندگان
چکیده
Transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) studies of GaAs/GaN interfaces, obtained by direct wafer bonding, are presented. TEM observations show that most of the interface area was well bonded. A thin oxide layer, confirmed by EDX, was present at the interface in the well-bonded regions. Plan-view TEM studies showed the presence of two dislocation networks in such regions. They formed to accommodate: (1) tilt between bonded crystals and (2) strain, which appeared during sample cooling due to mismatch in thermal expansion coefficients. Asymmetrical, often elongated, cavities, formed on the GaAs side, were present at the interface between the well-bonded regions. It was shown by EDX that the walls of these cavities are covered with native oxide.
منابع مشابه
Structural characterization of GaN and GaAsxN1-x grown by electron cyclotron resonance-metalorganic molecular beam epitaxy
Electron cyclotron resonance-metalorganic molecular beam epitaxy has been used to deposit GaN and GaAsxN [_ x layers on various substrates. This paper will report on the structural characterization of this material, as measured by x-ray diffraction and cross-sectional transmission electron microscopy. GaAsxN1x layers grown on GaAs appear to be cubic while those grown on GaP are surprisingly hex...
متن کاملStructural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy
GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented a-GaN. Photoluminescence studies show...
متن کاملDetermination of Group III Nitride Film Properties by Reflectance and Spectroscopic Ellipsometry Studies
Reflectance measurements under normal incidence of light and variable angle spectroscopic ellipsometry (SE) studies are applied for characterizing hexagonal GaN films grown by molecular beam epitaxy on both GaAs (111)B and 6H-SiC substrates. A comparison of the reflectance above the band gap with model calculations for a smooth film yields definitely the root mean square surface roughness. By a...
متن کاملWafer bonding of gallium arsenide on sapphire
Three-inch (100) gallium arsenide wafers were bonded to (1102) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 ◦C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal ...
متن کاملFormation of gallium arsenide nanostructures in Pyrex glass.
In this paper, we report on a simple, low-cost process to grow GaAs nanostructures of a few nm diameter and ∼50 nm height in Pyrex glass wafers. These nanostructures were grown by sequential plasma activation of GaAs and Pyrex glass surfaces using a low-temperature hybrid plasma bonding technology in air. Raman analyses of the activated surfaces show gallium oxide and arsenic oxide, as well as ...
متن کامل