GAAS Conference P411-537
نویسندگان
چکیده
Active mixers operating at 23 GHz are designed and fabricated in SiGe technology. An integrated diode linearizer is used to improve the linearity of the mixer. Measurement and simulation show excellent agreement. Typically, 10 dB double-sideband noise figure, 10 dBm IIP3 and 2 dB conversion gain are measured, featuring low noise and high linearity in a same design.
منابع مشابه
GAAS Conference P411-537
DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz down-conversion mixer for DSRC communication system is designed and fabricated using 0.8 m SiGe HBT process technology and RF/LO matching circuits, RF/LO input balun circuits and IF output balun circuit are all integrated on chip. The measured per...
متن کاملHidden Symmetry in Topological Gravity
Talk presented by P.N. at “Mathematics and Physics of Strings,” Berkeley and “Topology and Geometry in Theoretical Physics,” Turku (Finland), 1991. Disciplines Physical Sciences and Mathematics | Physics This conference paper is available at ScholarlyCommons: http://repository.upenn.edu/physics_papers/537
متن کاملویژگی های الکترونی، مغناطیسی و اپتیکی نانو لایه GaAs خالص و آلائیده شده با ناخالصی های Mn و Fe واقع بر سطح [001]
انبوهه و نانو لایهی GaAs به دلیل کاربردهای وسیع مورد توجه بسیاری از پژوهشگران قرار گرفته اند. به دلیل اهمیت نانو لایه GaAs ، در این مقاله با استفاده از دو ناخالصی Mn و Fe احتمال ایجاد گذار فاز رسانا به نیمرسانا و برعکس هچنین چگونگی جابجایی ستیغ های ضرایب اپتیکی این نانو لایهها مورد بررسی قرار می گیرد. به این منظور ویژگیهای ساختاری، الکترونی و مغناطیسی نانو لایه ی GaAs خالص و آلائیده شده با...
متن کاملEpitaxial lift-off for wafer-scale GaAs-on-Si semi-monolithic integration - Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
shown record low dark currents (c 10
متن کاملPii: S0026-2692(00)00032-x
The neuron-MOS (neu-MOS) transistor, recently discovered by Shibata and Ohmi in 1991 [T. Shibata, T. Ohmi, International Electron Devices Meeting, Technical Digest, 1991] uses capacitively coupled inputs onto a floating gate. Neu-MOS enables the design of conventional analog and digital integrated circuits with a significant reduction in transistor count [L.S.Y. Wong, C.Y. Kwok, G.A. Rigby, in:...
متن کامل