Switchable graphene-substrate coupling through formation/dissolution of an intercalated Ni-carbide layer

نویسندگان

  • Cristina Africh
  • Cinzia Cepek
  • Laerte L. Patera
  • Giovanni Zamborlini
  • Pietro Genoni
  • Tevfik O. Menteş
  • Alessandro Sala
  • Andrea Locatelli
  • Giovanni Comelli
چکیده

Control over the film-substrate interaction is key to the exploitation of graphene's unique electronic properties. Typically, a buffer layer is irreversibly intercalated "from above" to ensure decoupling. For graphene/Ni(111) we instead tune the film interaction "from below". By temperature controlling the formation/dissolution of a carbide layer under rotated graphene domains, we reversibly switch graphene's electronic structure from semi-metallic to metallic. Our results are relevant for the design of controllable graphene/metal interfaces in functional devices.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni3C/NiCx)/graphene/Ni/Ni silicides (Ni2Si...

متن کامل

Nickel carbide as a source of grain rotation in epitaxial graphene.

Graphene has a close lattice match to the Ni(111) surface, resulting in a preference for 1 × 1 configurations. We have investigated graphene grown by chemical vapor deposition (CVD) on the nickel carbide (Ni(2)C) reconstruction of Ni(111) with scanning tunneling microscopy (STM). The presence of excess carbon, in the form of Ni(2)C, prevents graphene from adopting the preferred 1 × 1 configurat...

متن کامل

Near-Ambient-Pressure X-ray Photoelectron Spectroscopy Study of Methane-Induced Carbon Deposition on Clean and Copper-Modified Polycrystalline Nickel Materials.

In order to simulate solid-oxide fuel cell (SOFC)-related coking mechanisms of Ni, methane-induced surface carbide and carbon growth was studied under close-to-real conditions by synchrotron-based near-ambient-pressure (NAP) X-ray photoelectron spectroscopy (XPS) in the temperature region between 250 and 600 °C. Two complementary polycrystalline Ni samples were used, namely, Ni foam-serving as ...

متن کامل

Origin of doping in quasi-free-standing graphene on silicon carbide.

We explain the robust p-type doping observed for quasi-free-standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal polytype of the material and independent of any details of the interface formation. We show that sign and magnitude of the polarization are in perfect agreemen...

متن کامل

Unravelling the mechanisms of giant spin-orbit splitting in graphene on metals

Weak interaction between graphene and metals tends to preserve the graphene’s characteristic Dirac cones almost intact in the band structure. However, recently it has been shown in experiments that even in case of very weak graphene/substrate coupling the presence of a heavy 5d metal can induce giant spin-orbit splitting (SO) of Rashba type in the graphene’s π bands, although the intrinsic SO c...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016