Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
نویسندگان
چکیده
Czochralski silicon D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs Department of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany SINTEF Materials and Chemistry, A. Getz v. 2B, 7465 Trondheim, Norway ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten, The Netherlands
منابع مشابه
Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon
The impact of boron–oxygen-related recombination centers as well as their defect kinetics have been intensely studied in boron-doped oxygen-rich p-type crystalline silicon. Experimental data for the defect in simultaneously boronand phosphorus-doped compensated pand n-type silicon, however, is sparse. In this study, we present time-resolved carrier lifetime measurements on Czochralski-grown sil...
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