Gallium self-diffusion in gallium phosphide
نویسندگان
چکیده
Ga self-diffusion in gallium phosphide ~GaP! is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy ~SIMS! is used to monitor intermixing of Ga and Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy ~MBE! on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D52.0 cm s exp(24.5 eV/kBT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ;4 kB . © 1997 American Institute of Physics. @S0003-6951~97!00914-5#
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