NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP
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چکیده
Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance – Random READ: 25μs – Sequential READ: 30ns (3V x8 only) • WRITE performance – PROGRAM PAGE: 300μs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 1.70V–1.95V1 or 2.7V–3.6V • Automated PROGRAM and ERASE • Basic NAND Flash command set: – PAGE READ, READ for INTERNAL DATA MOVE, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, PROGRAM for INTERNAL DATA MOVE, BLOCK ERASE, RESET • New commands: – PAGE READ CACHE MODE – One-time programmable (OTP), including: OTP DATA PROGRAM, OTP DATA PROTECT, OTP DATA READ – READ UNIQUE ID (contact factory) – READ ID2 (contact factory) • Operation status byte provides a software method of detecting: – PROGRAM/ERASE operation completion – PROGRAM/ERASE pass/fail condition – Write-protect status • READY/BUSY (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle completion • WP# pin: hardware write protect
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