Electron-beam-induced damage in wurtzite InN
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چکیده
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منابع مشابه
Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy
Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7G0.2 eV) and for wurtzite GaN at (3.3G 0.2 eV) that are ascribed to the fundam...
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Zincblende and wurtzite phases of InN are found in InN epilayers deposited by molecular beam epitaxy on GaN buffers which were grown by metal organic chemical vapor deposition. Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in both phases of InN. GaN buffer layers were used as VEELS reference. The chemistry and crystalline structure of the observed a...
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The theoretical models for calculations of band structure of wurtzite InN have been studied. Several models including nearly free electron model, pseudopotional method, Tight-Binding moethod and k·p method will be discussed. Currently most InN epitaxial films grown on GaN or sapphire substrate have wurtzite structure. To study the symmetry properties of the electron wave function in wurtzite st...
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