Anomalous Urbach tail in GaAs.
نویسندگان
چکیده
The Urbach tail in crystalline GaAs and Si due to thermal vibration is evaluated in the temperature range 0—810 K. Recent experiments suggest that there is no thermally induced Urbach tail in undoped GaAs. This is most unexpected since thermally induced tails at the absorption edge having the Urbach form and widths Eo(T) linear in T are observed in a wide range of crystalline and amorphous semiconductors. Clear understanding of the tail is important in device applications. In our calculations, we obtain an absorption tail having a simple exponential energy dependence (Urbach form) in GaAs at all temperatures with Eo(T) proportional to T. However, due to a very weak electron-phonon interaction, the magnitude of Eo(T) is unusually small, much smaller than the temperature independent, structurally induced component Fo 10 meV. As a test of the method, the tail is similarly evaluated in Si providing an Eo(T) value in agreement with experiment.
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ورودعنوان ژورنال:
- Physical review. B, Condensed matter
دوره 51 3 شماره
صفحات -
تاریخ انتشار 1995