A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation
نویسندگان
چکیده
We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGc HBT using a hydrodynamic transport model.
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