Characterization of phosphorescence oxygen sensor based on erythrosin B in sol±gel silica in wide pressure and temperature ranges
نویسندگان
چکیده
Room temperature phosphorescence emission of erythrosin B in sol±gel silica is studied over the oxygen pressure range from 10ÿ6 to 1000 mbar. Quenching by oxygen is signi®cant over the entire range. The Stern±Volmer (SV) intensity data can be very well ®tted using the two-site model. The temperature dependence of the phosphorescence and the delayed ̄uorescence are examined from ÿ173 to 2008C at an oxygen pressure of 0.015 mbar. The phosphorescence and delayed ̄uorescence show opposite trends of temperature dependence, which can be exploited for temperature compensation of the sensor probe. # 2001 Elsevier Science B.V. All rights reserved.
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