Global modeling of microwave three terminal active devices using the FDTD method
نویسندگان
چکیده
This paper presents a new approach for the global electromagnetic analysis of the three-Terminal active linear and nonlinear microwave circuits using the Finite-Difference Time Domain (FDTD) Method. Here, we have updated the both electric field components on the three terminal active device by correlating the voltage and current with its impedance. This approach is applied to the analysis of a linear amplifier which includes a three-terminal active MESFET device. Simulations results are in good agreement with those of the commercial tool.
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ورودعنوان ژورنال:
- IEICE Electronic Express
دوره 2 شماره
صفحات -
تاریخ انتشار 2005