Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As
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چکیده
Articles you may be interested in Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Appl. Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems Appl.
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Redistribution of implanted species in polycrystalline silicon films on silicon substrate
Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 3...
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