H Irradiation for Reverse Recovery Softness and Reliability of Power p-i-n Diodes for Snubberless Applications
نویسندگان
چکیده
We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fastrecovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode’s reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.
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Anomalous overvoltage oscillations in the reverse recovery of power p-i-n diodes: experiments and simulations
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