Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

نویسندگان

  • R. P. Shi
  • X. D. Huang
  • Johnny K. O. Sin
  • P. T. Lai
چکیده

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 65  شماره 

صفحات  -

تاریخ انتشار 2016