Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
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چکیده
منابع مشابه
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
The charge-trapping characteristics of Ga2O3 (Gd2O3 ) (denoted as GGO) with and without nitrogen incorporation were investigated based on Al/Al2O3 / GGO/SiO2 /Si (metalalumina-nitride-oxide-silicon) capacitors. Compared with the capacitor without nitrogen incorporation, the one with nitrided GGO showed a larger memory window (10 V at ±16 V, 1 s), a higher program speed with a low gate voltage (...
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 65 شماره
صفحات -
تاریخ انتشار 2016