VIOMAP, the S-parameter Equivalent for Weakly Nonlinear RF and Microwave Devices

نویسندگان

  • Frans Verbeyst
  • Marc Vanden Bossche
چکیده

This paper presents the Volterra input-output map as an extension of the S-parameters towards weakly nonlinear RF and microwave devices. This ‘VIOMAP’ can be measured and it can be used to predict the behavior of cascaded nonlinear twoports.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

GSM 900 MHz Microwave Radiation-Induced Alterations of Insulin Level and Histopathological Changes of Liver and Pancreas in Rat

Background: The rapidly increasing use of mobile phones has led to public concerns about possible health effects of these popular communication devices. This study is an attempt to investigate the effects of radiofrequency (RF) radiation produced by GSM mobile phones on the insulin release in rats.Methods: Forty two female adult Sprague Dawley rats were randomly divided into 4 groups. Group1 we...

متن کامل

Rf Equivalent-circuit Model of Interconnect Bends Based on S-parameter Measurements

A modified model for RF interconnect bends on lossy substrate in CMOS technology is presented. The model parameters are extracted directly from the on-wafer S-parameter measurements. The accuracy is verified up to 20 GHz by the measurements of the test structures. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 170–173, 2005; Published online in Wiley InterScience (www.interscienc...

متن کامل

Rectification of RF Fields in Load Dependent Coupled Systems: Application to Non-Invasive Electroceuticals

Electroceuticals are medical devices that employ electric signals to alter the activity of specific nerve fibers to achieve therapeutic effects. The rapid growth of RF microelectronics has resulted in the development of very small, portable, and inexpensive shortwave and microwave radio frequency (RF) amplifiers, raising the possibility of utilizing these new RF technologies to develop non-cont...

متن کامل

Awr’s Support of Polyharmonic Distortion and Nonlinear Behavioral Models

Linear and nonlinear device models are the building blocks of most RF and microwave designs. S-parameters are often used to represent linear devices. As a “black-box” model, they can easily be obtained using a vector network analyzer and distributed for simulation. S-parameters use superposition to equate the linear relationship between incident and refl ected waves at all of the device’s ports...

متن کامل

Influence of LaAlO3 surface topography on rf current distribution in superconducting microwave devices

A laser scanning microscope with a thermal spot size of about 4 mm is used to measure a quantity proportional to the rf current density in an operating superconducting coplanar waveguide microwave resonator. The twinning of the LaAlO3 substrate produces a meandering of the current at the edges due to irregularities in the wet etching of the YBa2Cu3O72d film associated with substrate twin domain...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1994