Optimizing Reliability Analysis of Mems Devices on an Hpc Setup Using Multi Scale Modeling

نویسنده

  • ROHIT PATHAK
چکیده

ion Scale Properties Nano CMOS 30-100nm Capacitance in CMOS RF MEMS 100-500nm Properties of antenna CNT 10-30 nm Conductance Although these tools have been successful in simulating the behavior of simple-function devices but fails when it goes to more complex areas because the physics developed cannot explain accurately all the properties, also they have not been as successful in simulating the behavior of more complex systems on a personal computer (PC) nor within a practical amount of time. Software proves its utility in technological advancements in MEMS by facilitating the design process and reducing the time of computation. Some of the features are packaged in a CAE for MEMS tool called SUGAR [12] which has also been shoed in [22]. Mechanical modeling as from RF-MEMS prospective is given in [24] where MA (Nm) is the reaction moment at the left end, and RA (N) is the vertical reaction at the left end. The equations are:-

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تاریخ انتشار 2009