Thermally activated conductance of a silicon inversion layer by electrons excited above the mobility edge
نویسنده
چکیده
The thermally activated conductivity U of an n-type inversion layer on a (100) oriented silicon surface and its derivative do/dT were measured in the temperature range 1.4 K-4.2 K. Above T = 2.5 K both the temperature dependence of ( n u ) (du/dT) and the relation between this quantity and ocannot be reconciled with a universal pre-exponential factor, i .e. the minimum metallic conductivity, but are shown to be satisfactorily described by a prefactor which is proportional to the temperature. The experimental results presented are consistent with activation of the number of mobile electrons above a mobility edge in the lowest sub-band. and indicate a mobility which is independent of both temperature and
منابع مشابه
Temperature dependent metallic conductance above the mobility edge of a silicon inversion layer
The temperature dependence of the conductance of an n-type inversion layer on a (100) silicon surface has been examined between 1.4 K and 4.2K at electron densities at which the Fermi level is close above the mobility edge of the lowest sub-band. It can be explained by assuming a separate band of localised bound states from which electrons are thermally excited into the extended states of the s...
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