Photocurrents in a Single InAs Nanowire/Silicon Heterojunction.

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

We report on the electrical characterization of one-sided p(+)-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process occurring in this highly lattice mismatched material system. The lattice mismatch gives rise to dislocations at the interface as confirmed by electron microscopy. Despite this, a negative differential resistance with peak-to-valley current rat...

Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

Nanowire Growth and Device Fabrication n-type InAs NWs are grown on Si <111> by selective area epitaxy within e-beam patterned SiOx openings by metal-organic chemical vapor deposition

In this paper we present vertical tunnel diodes and tunnel FETs (TFETs) based on III-V–Si nanowire heterojunctions. We experimentally demonstrate InAs–Si Esaki tunnel diodes with record high currents of 6 MA/cm at 0.5 V in reverse bias. Furthermore, we have fabricated vertical InAs–Si nanowire TFETs with gate-all-around architecture and high-k dielectrics. The InAs–Si combination allows achievi...