Correlation of doping, structure, and carrier dynamics in a single GaN nanorod Citation
نویسندگان
چکیده
Correlation of doping, structure, and carrier dynamics in a single GaN nanorod. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.
منابع مشابه
Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes
Related Articles Influence of exciton lifetime on charge carrier dynamics in an organic heterostructure Appl. Phys. Lett. 102, 113304 (2013) Influence of exciton lifetime on charge carrier dynamics in an organic heterostructure APL: Org. Electron. Photonics 6, 52 (2013) Influence of internal absorption and interference on the optical efficiency of thin-film GaN-InGaN light-emitting diodes Appl....
متن کاملStructural and electrical properties of In-doped vanadium oxide thin films prepared by spray pyrolysis
The In-doped vanadium pentoxide nanostructures with different doping levels including 0, 10, 20 and 30 at.% were prepared by the spray pyrolysis technique. The prepared thin films were characterized by the x-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results revealed that the films were crystalline in tetragonal phase. Increasing the In-doping level made the structure...
متن کاملElastic Properties and Fracture Analysis of Perfect and Boron-doped C2N-h2D Using Molecular Dynamics Simulation
This paper explores the mechanical properties and fracture analysis of C2N-h2D single-layer sheets using classical molecular dynamics (MD) simulations. Simulations are carried out based on the Tersoff potential energy function within Nose-Hoover thermostat algorithm at the constant room temperature in a canonical ensemble. The influences of boron (B) doping on the mechanical properties, ...
متن کاملExciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence
Articles you may be interested in Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence J. Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN Appl. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN Carrier relaxation ...
متن کاملInvestigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
For InGaN/GaN based nanorod devices using a top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall defects (which decrease light output efficiency) and the mitigated quantum confined Stark effect (QCSE) due to strain relaxation (which increases internal quantum efficiency). Therefore, the exploration of low-temperature optical behaviors of ...
متن کامل