Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer
نویسندگان
چکیده
UNLABELLED Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. PACS 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.
منابع مشابه
Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices
Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 3...
متن کاملRoom-temperature larger-scale highly ordered nanorod imprints of ZnO film.
Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a high-temperature process. with a 600 nm pitch on top of a critical 200 nm thick Imprinting ZnO nanorods of 200 nm in diameter and 200 nm in height continuous ZnO wetting layer, the l...
متن کاملCharacterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.
Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results ar...
متن کاملElectroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes
This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...
متن کاملEffect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes
Related Articles Silicon nanoparticle-ZnS nanophosphors for ultraviolet-based white light emitting diode J. Appl. Phys. 112, 074313 (2012) Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO2 micro-pillars with tapered sidewalls Appl. Phys. Lett. 101, 141105 (2012) Electron injection in magnesium-doped organic light-emitting diodes Appl. Phys. Lett. 101, 141102...
متن کامل