Development of Uniform CdTe Pixel Detectors Based on Caltech ASIC
نویسندگان
چکیده
We have developed a large CdTe pixel detector with dimensions of 23.7 × 13.0 mm and a pixel size of 448 × 448 μm. The detector is based on recent technologies of an uniform CdTe single crystal, a two-dimensional ASIC, and stud bump-bonding to connect pixel electrodes on the CdTe surface to the ASIC. Good spectra are obtained from 1051 pixels out of total 1056 pixels. When we operate the detector at –50 ◦C, the energy resolution is 0.67 keV and 0.99 keV at 14 keV and 60 keV, respectively. Week-long stability of the detector is confirmed at operating temperatures of both –50◦C and –20 ◦C. The detector also shows high uniformity: the peak positions for all pixels agree to within 0.82 %, and the average of the energy resolution is 1.04 keV at a temperature of –50 ◦C. When we normalized the peak area by the total counts detected by each pixel, a variation of 2.1 % is obtained.
منابع مشابه
Direct Conversion CdZnTe and CdTe Detectors for Digital Mammography
Hybrid CdZnTe and CdTe pixel detector arrays with 50 50 micron pixel sizes that convert x-rays directly into charge signals are under development at NOVA for applications to digital mammography. CdZnTe and CdTe have superior x-ray quantum efficiency compared to either emulsion-based film, phosphor-based detectors or other low-Z, solid-state detectors such as silicon. In this paper, latest resul...
متن کاملEdge effects in a small pixel CdTe for X-ray imaging
Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80×80 pixels on a 250 μm pitch. Hist...
متن کاملRecent Progress in CdTe and CdZnTe Detectors
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γray detection. The high atomic number of the materials (ZCd =48, ZTe=52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ∼ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of cha...
متن کاملDevelopment of a Si/CdTe semiconductor Compton telescope
We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined w...
متن کاملResults of a Si/CdTe Compton Telescope
We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an a...
متن کامل