Demonstration of an erbium-doped microsphere laser on a silicon chip
نویسندگان
چکیده
We demonstrate a low-threshold microsphere laser on a silicon chip, fabricated from erbium-doped silica sol–gel film. Single-longitudinal mode lasing emission is observed from a 37 μm diameter microsphere cavity with an erbium ion concentration of 2× 1019 cm−3. The measured lasing threshold of the silica microsphere laser is as low as 4.8 μW. (Some figures may appear in colour only in the online journal)
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