Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

Modified Enthalpy Method Applied to Laser Annealing of Semi Conductor Films

The rapid melting of silicon film due to the absorption of a CW laser beam radiation is studied. The silicon film melting and recrystallization is mainly controlled by the temperature distribution in the semiconductor. The enthalpy technique for the solution of phase change problems is used in an explicit finite difference form to calculate the transient temperature distribution in the silicon ...

Epitaxial growth of single crystalline lattice-matched Pr0.9Y1.1O3 on SrO-passivated Si001: growth orientation and crystallization tailoring by interface engineering

In this work, SrO buffer layers were employed as an interface engineering approach to realize single crystalline mixed ternary rare earth bixbyite oxide (RE2O3) films on Si (001) substrate. Single crystalline mixed PrxY2-xO3 (x=0-2) has been successfully grown on Si (111) (Ref. 7). However, the formation of such mixed oxide can only be realized at >750 °C, therefore when it is directly grown on...

Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...

Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001).

A highly anisotropic growth morphology is found for heteroepitaxial gallium sesquiselenide (Ga2Se3) on the lattice matched substrate, arsenic-terminated Si(001). Scanning tunneling microscopy of Ga2Se3 films reveals nanoscale, wirelike structures covering the surface in parallel lines, less than 1 nm wide and up to 30 nm long. Core-level photoemission spectroscopy and diffraction reveals the lo...