Hybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors
نویسندگان
چکیده
We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled with a 2D and 3D multi-grid Poisson solver.
منابع مشابه
Direct Sampling of Monte Carlo Flight Paths in Media with Continuously Varying Cross-sections
A new Monte Carlo technique has been developed for the direct sampling of flight paths in media with continuously varying cross-sections. This technique provides an alternative to the use of delta-tracking for problems where the material cross-sections vary over the particle flight paths. The technique is general, and may provide benefits to Monte Carlo calculations of charged particles, atmosp...
متن کاملMonte Carlo Studies of Charge Transport Below the Mobility Edge
Charge transport below the mobility edge, where the charge carriers are hopping between localized electronic states, is the dominant charge transport mechanism in a wide range of disordered materials. This type of incoherent charge transport is fundamentally different from the coherent charge transport in ordered crystalline materials. With the advent of organic electronics, where small organic...
متن کاملField Dependent Charge Carrier Transport for Organic Semiconductors at the Time of Flight Configuration
In this paper, we used the time-of-flight (TOF) of a charge packet, that injected by a voltage pulse to calculate the drift velocity and mobility of holes in organic semiconducting polymers. The technique consists in applying a voltage to the anode and calculating the time delay in the appearance of the injected carriers at the other contact. The method is a simple way to determine the charge t...
متن کاملCharge Carrier Transport in Organic Semiconductor Devices: Establishing a Connection between kinetic Monte Carlo and Drift Diffusion Models
3
متن کاملNonlinear Models for Silicon Semiconductors
In this paper we present exact closures of the 8-moment and the 9-moment models for the charge transport in silicon semiconductors based on the maximum entropy principle. The validity of these models is assessed by numerical simulations of an n-+n-n+ device. The results are compared with those obtained from the numerical solution of the Boltzmann Transport Equation both by Monte Carlo method an...
متن کامل