Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors
نویسندگان
چکیده
We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor sDGSOId operated as a velocity modulation transistor sVMTd and as a conventional field effect transistor sFETd. Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length. © 2005 American Institute of Physics. fDOI: 10.1063/1.1929085g
منابع مشابه
Electron transport in ultrathin double-gate SOI devices
Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-electron Monte Carlo simulator has been used. 2001 Elsevier Science B.V. All rights reserved.
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