Fully differential cryogenic transistor amplifier

نویسندگان

  • Nikolai Beev
  • Mikko Kiviranta
چکیده

We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K – 300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN < 0.8 K at 4 k source resistance and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 W, has noise temperature TN 2 K at 25 k source resistance and 2 MHz bandwidth. The 1/f noise corner frequency is a few times 10 kHz. We foresee the amplifier to have an application in the readout of Superconducting Quantum Interference Devices (SQUIDs), Superconducting Tunnel Junction Detectors (STJs) and Transition Edge Sensors (TESes). We have verified the practical use of the amplifier by reading out a 4.2 K 480-SQUID array with 40 MHz bandwidth and < 8×10 0 / Hz flux noise. Highlights we have built a fully differential cryogenic dc-coupled amplifier the amplifier has high bandwidth, low noise temperature and high CMRR our amplifier is suitable for readout of SQUIDs and superconducting detectors

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A high-performance cryogenic amplifier based on a radio-frequency single electron transistor

We demonstrate a high-performance cryogenic amplifier based on a radio-frequency single-electrontransistor ~rf-SET!. The high charge sensitivity and large bandwidth of the rf-SET, along with low power dissipation, low capacitance and on-chip integrability, make it a good candidate for a general-purpose cryogenic amplifier for high impedance sources. We measure a large-gate rf-SET with an open-l...

متن کامل

Development of Cryogenic Readout Electronics for Far-Infrared Astronomical Focal Plane Array

We have been developing low power cryogenic readout electronics for space borne large format far-infrared image sensors. As the circuit elements, a fully-depleted-silicon-on-insulator (FD-SOI) CMOS process was adopted because they keep good static performance even at 4.2 K where where various anomalous behaviors are seen for other types of CMOS transistors. We have designed and fabricated sever...

متن کامل

CMOS Fully Differential Feedforward-Regulated Folded Cascode Amplifier

A fully differential self-biased inverter-based folded cascode amplifier which uses the feedforward-regulated cascode principle is presented. A detailed small-signal analysis covering both the differential-mode and the common-mode paths of the amplifier is provided. Based on these theoretical results a design is given and transistor level simulations validate the theoretical study and also demo...

متن کامل

Layout-constrained Retargeting of Analog Blocks

This paper introduces a complete methodology for retargeting of transistor-level circuits to different sets of specifications. By careful integration of the device sizing and layout generation tasks, fully functional designs are generated in a few minutes of CPU time. The methodology is illustrated via the retargeting of a fully-differential Miller-compensated two-stage operational amplifier fo...

متن کامل

An Ultra High CMRR Low Voltage Low Power Fully Differential Current Operational Amplifier (COA)

this paper presents a novel fully differential (FD) ultra high common mode rejection ratio (CMRR) current operational amplifier (COA) with very low input impedance. Its FD structure that attenuates common mode signals over all stages grants ultra high CMRR and power supply rejection ratio (PSRR) that makes it suitable for mixed mode and accurate applications. Its performance is verified by HSPI...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013